HOT ELECTRON RELIABILITY OF DEEP SUBMICRON MOS TRANSISTORS

Physically-Based Matching Model for Deep-submicron MOS Transistors

This paper presents a new physically-based deepsubmicron MOS transistors matching model that eliminates the large discrepancy between measured matching parameters and the values computed with the existing matching models. Previously neglected effects specific to the deep-submicron MOSFETs with highly doped channel and ultra-thin gate such as channel and gate random dopant fluctuation, gate depl...

Hot-carrier Reliability Simulation in Aggressively Scaled Mos Transistors

High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electro...

A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors

This paper discusses the aspects of modern MOS modeling requirements. Starting from the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation model, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for ef...

Graphene Hot-electron Transistors